1ED3122MC12HXUMA1 vs 2ED2738S01GXTMA1 Comparison

Detailed side-by-side comparison of 1ED3122MC12HXUMA1 by Infineon and 2ED2738S01GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1ED3122MC12HXUMA1 2ED2738S01GXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Product Type Isolated Gate Driver (single-channel) —
Isolation Technology Coreless Transformer (CT) —
Isolation Voltage (Vrms) 5.7 kVrms —
Maximum Transient Isolation (Vpk) 8 kVpk —
Output Current (source / sink) 10 A / 9 A —
Configuration High-side, non-inverting —
Number of Channels 1 —
Supply Voltage (VCC / VBS) 8 V to 35 V —
Propagation Delay (typ.) 30 ns —
Rise Time / Fall Time (typ.) 15 ns / 30 ns —
Miller Clamp Active (integrated) —
Short-Circuit Clamping Yes —
UVLO Primary and secondary side —
Operating Temperature -40 C to +125 C -40C to +125C
Package PG-DSO-8-66 (300-mil DSO-8) PG-VSON-10-5 (3x3 mm) with EP
Mounting Type Surface Mount Surface Mount
MSL Level 2 2 (1 year)
RoHS Status Compliant Compliant
Driver Configuration — Half-Bridge (High-Side + Low-Side)
Output Current (Source, peak) — 4.0 A
Output Current (Sink, peak) — 8.0 A
Output Current (Source, typ) — 1.0 A
Output Current (Sink, typ) — 2.0 A
Number of Outputs — 1
Input Type — Non-Inverting
Input Logic Compatibility — TTL
Supply Voltage (VDD/VCC) — 6 V to 20 V
Bootstrap Supply Voltage — Up to 600 V (HS pin rating)
Propagation Delay (typ) — 120 ns
Channel-to-Channel Match — 40 ns
Rise/Fall Time (1 nF load) — 1.5 ns / 1.5 ns
Negative Transient Immunity (HS) — -10 V to +20 V transient
Under-Voltage Lockout — VCC and Bootstrap
Bootstrap Diode — Integrated

Datasheets & Resources

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