1ED3122MC12HXUMA1 vs 2ED2738S01GXTMA1 Comparación
Comparación detallada lado a lado de 1ED3122MC12HXUMA1 por Infineon y 2ED2738S01GXTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 1ED3122MC12HXUMA1 | 2ED2738S01GXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,92 | $0,95 |
| Product Type | Isolated Gate Driver (single-channel) | — |
| Isolation Technology | Coreless Transformer (CT) | — |
| Isolation Voltage (Vrms) | 5.7 kVrms | — |
| Maximum Transient Isolation (Vpk) | 8 kVpk | — |
| Output Current (source / sink) | 10 A / 9 A | — |
| Configuration | High-side, non-inverting | — |
| Number of Channels | 1 | — |
| Supply Voltage (VCC / VBS) | 8 V to 35 V | — |
| Propagation Delay (typ.) | 30 ns | — |
| Rise Time / Fall Time (typ.) | 15 ns / 30 ns | — |
| Miller Clamp | Active (integrated) | — |
| Short-Circuit Clamping | Yes | — |
| UVLO | Primary and secondary side | — |
| Temperatura de funcionamiento | -40 C to +125 C | -40C to +125C |
| Encapsulado | PG-DSO-8-66 (300-mil DSO-8) | PG-VSON-10-5 (3x3 mm) with EP |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 2 | 2 (1 year) |
| Estado RoHS | Compliant | Compliant |
| Driver Configuration | — | Half-Bridge (High-Side + Low-Side) |
| Output Current (Source, peak) | — | 4.0 A |
| Output Current (Sink, peak) | — | 8.0 A |
| Output Current (Source, typ) | — | 1.0 A |
| Output Current (Sink, typ) | — | 2.0 A |
| Número de salidas | — | 1 |
| Input Type | — | Non-Inverting |
| Input Logic Compatibility | — | TTL |
| Supply Voltage (VDD/VCC) | — | 6 V to 20 V |
| Bootstrap Supply Voltage | — | Up to 600 V (HS pin rating) |
| Propagation Delay (typ) | — | 120 ns |
| Channel-to-Channel Match | — | 40 ns |
| Rise/Fall Time (1 nF load) | — | 1.5 ns / 1.5 ns |
| Negative Transient Immunity (HS) | — | -10 V to +20 V transient |
| Under-Voltage Lockout | — | VCC and Bootstrap |
| Bootstrap Diode | — | Integrated |