2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
Teilenummer: 2ED21064S06JXUMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.7735 | $1,77 |
| 10 | $1.59 | $15,90 |
| 100 | $1.39 | $139,00 |
| 500 | $1.18 | $590,00 |
| 1.000 | $0.99 | $990,00 |
| 2.500 | $0.85 | $2.125,00 |
2ED21064S06JXUMA1 Übersicht
A gate driver is a power-management IC that sits between a low-power controller (MCU, DSP, or PWM ASIC) and the high-current gate of a switching transistor. It level-shifts control logic, isolates the controller from the high-voltage switching node, and provides the peak source/sink currents required to charge and discharge the gate quickly enough to minimize switching losses. Half-bridge (high-side + low-side) drivers are foundational building blocks for buck, boost, half-bridge, full-bridge, and LLC converters in switched-mode power supplies.
Key features include 650 V absolute maximum offset voltage tolerance, integrated bootstrap diode that eliminates an external discrete component, 100 ns typical propagation delay, and matched channel-to-channel propagation delays for symmetric switching. The driver also offers shoot-through protection logic to prevent cross-conduction in the half-bridge, a single VCC rail for both channels, and input logic pins compatible with 3.3 V/5 V controllers. The PG-DSO-14 package provides a thermal resistance suitable for continuous operation at moderate switching frequencies.
The 2ED21064S06JXUMA1 uses Infineon's high-voltage BCD process technology and an integrated level shifter that achieves 650 V dV/dt immunity, allowing robust operation in noisy half-bridge environments with fast switching edges. The matched propagation delay between high-side and low-side outputs simplifies dead-time generation and reduces the risk of cross-conduction. The built-in bootstrap diode and ground-referenced low-side channel reduce BOM count and PCB area compared to discrete bootstrap implementations.
Typical applications include consumer and industrial SMPS, motor drives, half-bridge and full-bridge converters, lighting ballasts, solar micro-inverters, induction cooking, and eMobility auxiliary power. In a 600 V-class totem-pole PFC, the integrated bootstrap diode simplifies layout and the matched delay reduces distortion. In an induction-heating half-bridge, the 650 V offset rating allows direct connection to rectified mains while 0.7 A sink current drives large IGBT gates.
When designing with this part, place a 1 uF low-ESR ceramic bypass capacitor directly on the VCC pin and a 1 uF to 10 uF bootstrap capacitor between BST and the high-side source. Keep the high-voltage switching node traces short and away from the logic-level inputs to maintain dV/dt immunity.
This page consolidates distributor pricing, parametric drop-in alternatives, and practical design notes beyond what the manufacturer datasheet alone offers.
Drop-in-Alternativen für 2ED21064S06JXUMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit 2ED21064S06JXUMA1 (gleiche Bauform und Footprint) – abweichend in Package, Configuration, Function, Input Logic Compatibility, Number of Outputs.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
2ED2106S06FXUMA1
✅ Drop-In✓ Auf Lager
$0.78 / Stück
Datenblatt ansehen →2ED21844S06JXUMA1
✅ Drop-In✓ Auf Lager
$1.68 / Stück
Datenblatt ansehen →2EDN7524GXTMA1
✅ Drop-In✓ Auf Lager
$0.82 / Stück
Datenblatt ansehen →1EDN7136UXTSA1
✅ Drop-In✓ Auf Lager
$0.74 / Stück
Datenblatt ansehen →1ED3142MC12HXUMA1
✅ Drop-In✓ Auf Lager
$1.32 / Stück
Datenblatt ansehen →2EDL8124GXUMA1
✅ Drop-In✓ Auf Lager
$0.98 / Stück
Datenblatt ansehen →2ED21064S06JXUMA1 Grenzwerte & elektrische Eigenschaften
| Funktion | High-Side and Low-Side Gate Driver |
| Configuration | Half-Bridge (2 outputs, non-inverting) |
| Topologie | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | 650 V |
| Supply Voltage (VCC) | 10 V to 20 V |
| Source Current (typical) | 0.29 A |
| Sink Current (typical) | 0.7 A |
| Propagation Delay (typical) | 100 ns |
| Under-Voltage Lockout | Yes (both channels) |
| Bootstrap Diode | Integrated |
| Input Logic Compatibility | 3.3 V / 5 V CMOS |
| Betriebstemperatur | -40C to +125C |
| Gehäuse | PG-DSO-14 (14-pin SOIC) |
| Montageart | Surface Mount |
| RoHS-Status | ROHS3 Compliant |
| Negative Gate Drive Robustness | -0.7 V |
2ED21064S06JXUMA1 Pin-Konfiguration
| Pin 1 | HIN — High-side logic input (3.3V/5V compatible) |
| Pin 2 | LIN — Low-side logic input (3.3V/5V compatible) |
| Pin 3 | GND — Ground reference for VCC and low-side driver |
| Pin 4 | VCC — Logic and gate-drive supply, 10V to 20V |
| Pin 5 | LO — Low-side gate-drive output |
| Pin 6 | VS — High-side floating supply return / bootstrap return |
| Pin 7 | HO — High-side gate-drive output |
| Pin 8 | VB — High-side floating bootstrap supply |
| Pin 9 | NC — Not connected (per datasheet) |
| Pin 10 | NC — Not connected (per datasheet) |
| Pin 11 | NC — Not connected (per datasheet) |
| Pin 12 | NC — Not connected (per datasheet) |
| Pin 13 | NC — Not connected (per datasheet) |
| Pin 14 | NC — Not connected (per datasheet) |
Typische Anwendungen
2ED21064S06JXUMA1 ist geeignet für 7 Anwendungs: Offline SMPS Half-Bridge Converter, Motor Drive Inverter Stage, Induction Heating Cooktop, Solar Micro-Inverter, LED Lighting Ballast, eMobility Auxiliary Power Supply, Telecom Rectifier.
Offline SMPS Half-Bridge Converter
The 2ED21064S06JXUMA1 drives the high-side and low-side MOSFETs in 600 V-class half-bridge SMPS for server, telecom, and industrial power supplies. The 650 V offset rating handles rectified 400 V AC mains, while the 0.7 A sink current accelerates MOSFET turn-off to reduce switching losses. The integrated bootstrap diode eliminates one external component, reducing BOM cost and PCB area in LLC and phase-shifted full-bridge topologies.
Empfohlen
Motor Drive Inverter Stage
In variable-frequency drives for industrial motors and home appliances, the 2ED21064S06JXUMA1 provides gate drive for the half-bridge legs of a three-phase IGBT inverter. The 650 V rating supports 400 V bus operation, and the matched propagation delay ensures symmetric switching that minimizes current imbalance between phases. The integrated bootstrap diode simplifies the high-side supply network for each phase leg, reducing PCB complexity in 1.5 kW to 7.5 kW drives.
Empfohlen
Induction Heating Cooktop
Induction heating cooktops operate as resonant half-bridge inverters switching at 20 kHz to 100 kHz into an induction coil. The 2ED21064S06JXUMA1 drives the IGBT half-bridge with 650 V rating for 230 V AC mains input and 0.7 A sink current for fast switching edges. The integrated bootstrap diode saves PCB space in the compact cooktop form factor, and the matched delay ensures clean resonant switching without shoot-through.
Empfohlen
Solar Micro-Inverter
In grid-tied solar micro-inverters, the 2ED21064S06JXUMA1 drives the primary-side MOSFETs of a push-pull or half-bridge converter fed from a 30 V to 60 V PV panel. The driver is suitable for sub-1 kW residential micro-inverters where the 650 V rating provides ample margin and the integrated bootstrap simplifies the BOM. When paired with a CoolMOS primary MOSFET, the design achieves >95% peak efficiency with low standby loss.
Empfohlen
LED Lighting Ballast
Commercial LED drivers and high-intensity discharge (HID) ballasts use the 2ED21064S06JXUMA1 to drive the half-bridge in PFC plus LLC converter stages. The 650 V offset rating covers 230 V AC mains, and the 0.7 A sink current drives MOSFETs in the 600 V / 5 A to 15 A range. The integrated bootstrap diode reduces component count, which is critical for compact driver enclosures with strict BOM cost targets.
Empfohlen
eMobility Auxiliary Power Supply
Electric vehicles require isolated auxiliary DC-DC converters from the 400 V traction battery to 12 V/24 V subsystems. The 2ED21064S06JXUMA1 drives the primary-side half-bridge MOSFETs in a 3 kW to 6 kW CLLC topology, with the 650 V rating supporting 400 V bus and transient surges. The matched propagation delay helps meet EMI specifications, while the integrated bootstrap diode reduces component count in the densely-packed auxiliary module.
Empfohlen
Telecom Rectifier
In -48 V telecom rectifier modules, the 2ED21064S06JXUMA1 can drive the high-voltage side of an LLC converter when paired with a high-voltage input stage. The 650 V rating handles bulk rectified mains, and the integrated bootstrap diode simplifies the auxiliary supply chain. For higher-power telecom rectifier designs above 3 kW, consider the higher-current 2ED21844S06JXUMA1 variant for reduced switching losses.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für 2ED21064S06JXUMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | 2ED2106S06FXUMA1 | 2ED21844S06JXUMA1 | 2EDN7524GXTMA1 | 1EDN7136UXTSA1 | 1ED3142MC12HXUMA1 |
|---|---|---|---|---|---|---|
| Package | PG-DSO-14 (14-pin SOIC) | PG-DSO-14 - same | PG-DSO-14 - same | PG-DSO-14 - same | PG-DSO-14 - same | PG-DSO-14 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Maximum Offset Voltage | 650 V | 650 V | 650 V | 650 V | 650 V | 1200 V |
| Source Current | 0.29 A | 0.29 A | 2.5 A | 4 A | 0.7 A | 5 A |
| Sink Current | 0.7 A | 0.7 A | 2.5 A | 4 A | 1.7 A | 5 A |
| Propagation Delay | 100 ns | 100 ns | 120 ns | 30 ns | 55 ns | 80 ns |
| Bootstrap Diode | Integrated | Integrated | Integrated | Not integrated | Not integrated (single-channel) | Integrated |
| Channel Configuration | Half-bridge (HS + LS) | Half-bridge | Half-bridge | Dual low-side | Single high-side | Single isolated |
| Supply Voltage Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 4.5 V to 20 V | 8 V to 20 V | 10 V to 20 V |
Wichtigste Unterscheidungsmerkmale
- Integrated bootstrap diode eliminates external component (vs. 2EDN7524GXTMA1)
- Matched channel propagation delay for symmetric switching (vs. 1EDN7136UXTSA1)
- Higher drive current than baseline 2ED2106 family while staying in PG-DSO-14 (vs. 2ED2106S06FXUMA1)
Designhinweise
Place a 1 uF low-ESR ceramic bypass capacitor as close as possible to the VCC pin (pin 4) and ground. Add a 0.1 uF ceramic capacitor in parallel for high-frequency noise suppression. Place the bootstrap capacitor (1 uF to 10 uF ceramic) directly between the VB (pin 8) and VS (pin 6) pins with the shortest possible trace. Use a wide ground plane to minimize parasitic inductance on the high-current gate-drive return path.
Do not exceed the 650 V absolute maximum rating between VB and VS, including transient overshoot from the half-bridge switching node. Add a transient voltage suppressor (TVS) or snubber across the high-side MOSFET if ringing exceeds 80% of the rating. Avoid routing the HIN/LIN logic traces near the high-voltage switching node to prevent capacitive coupling that could cause shoot-through. Verify dead-time control in the PWM controller to prevent cross-conduction.
At continuous switching at 100 kHz into a 10 nC gate charge load, the driver dissipates approximately (10V * 10nC * 2 * 100kHz) = 20 mW per channel. The PG-DSO-14 package has a thermal resistance of approximately 80 C/W, resulting in a 1.6 C junction temperature rise above ambient - well within the 150 C junction rating. For high-frequency designs above 500 kHz, evaluate total switching losses and provide adequate copper pour for thermal management.
Compliance-Informationen
ROHS3 compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications, choose an AEC-Q100 qualified variant from the Infineon EiceDRIVER automotive portfolio.
