1EDI20N12AFXUMA1 vs 2ED2183S06FXUMA1 Vergleich
Detaillierter Direktvergleich von 1EDI20N12AFXUMA1 von Infineon und 2ED2183S06FXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 1EDI20N12AFXUMA1 | 2ED2183S06FXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,45 | $1,05 |
| Driver Configuration | Single high-side, isolated | — |
| Isolation Type | Galvanic (coreless transformer), reinforced | — |
| Number of Channels | 1 | — |
| Maximum Supply Voltage (Output Side) | 17 V | — |
| Minimum Supply Voltage (Output Side) | 3.1 V | — |
| Peak Source Current | 4.0 A (typical) | — |
| Peak Sink Current | 3.5 A (typical) | — |
| Working Voltage (Isolation) | 1200 V (high-side rail reference) | — |
| Propagation Delay | 120 ns (typical) | — |
| Ausgangskonfiguration | Separate source and sink pins | — |
| Short-Circuit Clamping | Yes (built-in) | — |
| Gehäuse | PG-DSO-8-51 (DSO-8, 8-pin, narrow body) | PG-DSO-8-53 (DSO-8) |
| Betriebstemperaturbereich | -40 °C to +125 °C | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 2 (per JEDEC J-STD-020) | 2 |
| RoHS Compliance | Compliant | — |
| Lead-Free | Yes | — |
| Driver Type | — | Half-Bridge Gate Driver |
| Number of Drivers | — | 1 |
| Anzahl der Ausgänge | — | 1 (half-bridge: high-side + low-side) |
| Configuration | — | High Side, Low Side, Non-Inverting |
| Maximum Offset Voltage | — | 650 V |
| Output Current (Sink/Source) | — | 2.5 A typical |
| Anstiegszeit | — | 15 ns |
| Abfallzeit | — | 15 ns |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Bootstrap Supply (VBS) | — | 10 V to 20 V (typ.) |
| Logic Input Voltage | — | 3.3 V / 5 V compatible (HIN, LIN) |
| Input Type | — | Non-Inverting |
| Bootstrap Diode | — | Integrated |
| Undervoltage Lockout (UVLO) | — | VCC and VBS |
| Betriebstemperatur | — | -40 C to +125 C |
| Terminal Finish | — | Tin (e3 per JESD-609) |
| Technology | — | SOI (Silicon-On-Insulator) |
| RoHS-Status | — | Compliant |