1EDN7126GXTMA1 vs 2EDL8124GXUMA1 Vergleich

Detaillierter Direktvergleich von 1EDN7126GXTMA1 von Infineon und 2EDL8124GXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1EDN7126GXTMA1 2EDL8124GXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,29 $0,98
Funktion Single-channel TDI gate driver for GaN HEMT and Si MOSFET —
Configuration Non-Inverting —
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A 3 A
Peak Sink Current 1.5 A 4 A
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) Non-inverting, TTL-compatible with hysteresis
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
Betriebstemperaturbereich -40C to +125C [DATA_NEEDED: operating temperature range in C]
Gehäuse PG-VSON-10-4 PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
RoHS-Status Compliant Compliant
Reach Compliant —
Lead-Free Yes Yes
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) —
Driver Configuration — Half-bridge (high-side + low-side)
Number of Drivers — 2
Bootstrap Supply (VBS) Maximum — 120 V
VCC Supply Range — [DATA_NEEDED: VCC min/max typical range]
Isolation Type — Junction isolation (JI)
Bootstrap Diode — Integrated
Propagation Delay (typical) — < 50 ns
Delay Matching Between Channels — [DATA_NEEDED: delay matching spec in ns]
UVLO — Present on VCC and VBS

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern