1N5711 vs 1N5711SB Vergleich

Detaillierter Direktvergleich von 1N5711 von STMicroelectronics und 1N5711SB von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1N5711 1N5711SB
Marke STMicroelectronics STMicroelectronics
Kategorie Diodes Diodes
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,18 $0,11
Diode Type Small-signal Schottky barrier (RF) diode Small Signal Schottky Barrier Diode
Peak Reverse Voltage (VRRM) 70 V 70 V
Continuous Forward Current (IF) 15 mA —
Power Dissipation 430 mW 430 mW
Forward Voltage (VF) 0.41 V (at 1 mA, per MACOM) [DATA_NEEDED: forward voltage at rated current]
Total Capacitance 2 pF —
Junction Capacitance (Cj) 1 pF [DATA_NEEDED: junction capacitance]
Dynamic Resistance 35 ohm —
Breakdown Voltage (VB) 70 V —
Switching Speed Picosecond class (ultrafast, no minority-carrier storage) —
Junction Structure Metal-to-silicon junction with PN guard ring —
Gehäuse DO-35 (DO-204AH) hermetic axial-lead glass DO-35 (SOD-27) hermetic glass axial
Montageart Through-Hole Through Hole
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Reverse Leakage Current [DATA_NEEDED: reverse leakage current at rated VR] —
RoHS-Status Compliant [DATA_NEEDED: RoHS compliance status]
Average Forward Current (IF(AV)) — 15 mA
Reverse Current (IR) — [DATA_NEEDED: reverse current at rated VR]
Reverse Recovery Time — Ultrafast (Schottky, no stored charge)
Configuration — Single
Junction Material — Metal-to-silicon junction
Primary Applications — UHF/VHF detection, mixing, switching, pulse shaping
Matched Batches — Available on request (ST)

Datenblätter & Ressourcen

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