1N5711 vs 1N5711SB Comparação

Comparação detalhada lado a lado de 1N5711 por STMicroelectronics e 1N5711SB por STMicroelectronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro 1N5711 1N5711SB
Marca STMicroelectronics STMicroelectronics
Categoria Diodes Diodes
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,18 $0,11
Diode Type Small-signal Schottky barrier (RF) diode Small Signal Schottky Barrier Diode
Peak Reverse Voltage (VRRM) 70 V 70 V
Continuous Forward Current (IF) 15 mA —
Power Dissipation 430 mW 430 mW
Forward Voltage (VF) 0.41 V (at 1 mA, per MACOM) [DATA_NEEDED: forward voltage at rated current]
Total Capacitance 2 pF —
Junction Capacitance (Cj) 1 pF [DATA_NEEDED: junction capacitance]
Dynamic Resistance 35 ohm —
Breakdown Voltage (VB) 70 V —
Switching Speed Picosecond class (ultrafast, no minority-carrier storage) —
Junction Structure Metal-to-silicon junction with PN guard ring —
Encapsulamento DO-35 (DO-204AH) hermetic axial-lead glass DO-35 (SOD-27) hermetic glass axial
Tipo de montagem Through-Hole Through Hole
Temperatura de operação [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Reverse Leakage Current [DATA_NEEDED: reverse leakage current at rated VR] —
Status RoHS Compliant [DATA_NEEDED: RoHS compliance status]
Average Forward Current (IF(AV)) — 15 mA
Reverse Current (IR) — [DATA_NEEDED: reverse current at rated VR]
Reverse Recovery Time — Ultrafast (Schottky, no stored charge)
Configuration — Single
Junction Material — Metal-to-silicon junction
Primary Applications — UHF/VHF detection, mixing, switching, pulse shaping
Matched Batches — Available on request (ST)

Fichas técnicas e recursos

Ver todos os produtos Criar BOM Solicitar cotação