1N5711SB vs 1N5711 Vergleich

Detaillierter Direktvergleich von 1N5711SB von STMicroelectronics und 1N5711 von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1N5711SB 1N5711
Marke STMicroelectronics STMicroelectronics
Kategorie Diodes Diodes
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,11 $0,18
Diode Type Small Signal Schottky Barrier Diode Small-signal Schottky barrier (RF) diode
Peak Reverse Voltage (VRRM) 70 V 70 V
Average Forward Current (IF(AV)) 15 mA —
Power Dissipation 430 mW 430 mW
Forward Voltage (VF) [DATA_NEEDED: forward voltage at rated current] 0.41 V (at 1 mA, per MACOM)
Reverse Current (IR) [DATA_NEEDED: reverse current at rated VR] —
Junction Capacitance (Cj) [DATA_NEEDED: junction capacitance] 1 pF
Reverse Recovery Time Ultrafast (Schottky, no stored charge) —
Configuration Single —
Gehäuse DO-35 (SOD-27) hermetic glass axial DO-35 (DO-204AH) hermetic axial-lead glass
Montageart Through Hole Through-Hole
Junction Material Metal-to-silicon junction —
Primary Applications UHF/VHF detection, mixing, switching, pulse shaping —
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
RoHS-Status [DATA_NEEDED: RoHS compliance status] Compliant
Matched Batches Available on request (ST) —
Continuous Forward Current (IF) — 15 mA
Total Capacitance — 2 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current at rated VR]

Datenblätter & Ressourcen

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