1N5711SB vs 1N5711 Comparação

Comparação detalhada lado a lado de 1N5711SB por STMicroelectronics e 1N5711 por STMicroelectronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro 1N5711SB 1N5711
Marca STMicroelectronics STMicroelectronics
Categoria Diodes Diodes
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,11 $0,18
Diode Type Small Signal Schottky Barrier Diode Small-signal Schottky barrier (RF) diode
Peak Reverse Voltage (VRRM) 70 V 70 V
Average Forward Current (IF(AV)) 15 mA —
Power Dissipation 430 mW 430 mW
Forward Voltage (VF) [DATA_NEEDED: forward voltage at rated current] 0.41 V (at 1 mA, per MACOM)
Reverse Current (IR) [DATA_NEEDED: reverse current at rated VR] —
Junction Capacitance (Cj) [DATA_NEEDED: junction capacitance] 1 pF
Reverse Recovery Time Ultrafast (Schottky, no stored charge) —
Configuration Single —
Encapsulamento DO-35 (SOD-27) hermetic glass axial DO-35 (DO-204AH) hermetic axial-lead glass
Tipo de montagem Through Hole Through-Hole
Junction Material Metal-to-silicon junction —
Primary Applications UHF/VHF detection, mixing, switching, pulse shaping —
Temperatura de operação [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Status RoHS [DATA_NEEDED: RoHS compliance status] Compliant
Matched Batches Available on request (ST) —
Continuous Forward Current (IF) — 15 mA
Total Capacitance — 2 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current at rated VR]

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