2ED21064S06JXUMA1 vs 2ED2304S06FXUMA1 Vergleich

Detaillierter Direktvergleich von 2ED21064S06JXUMA1 von Infineon und 2ED2304S06FXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2ED21064S06JXUMA1 2ED2304S06FXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,85 $0,66
Funktion High-Side and Low-Side Gate Driver —
Configuration Half-Bridge (2 outputs, non-inverting) —
Topologie High-Side, Low-Side with integrated bootstrap diode —
Maximum Offset / Boot Voltage 650 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typical) 0.29 A —
Sink Current (typical) 0.7 A —
Rise Time (typical) [DATA_NEEDED: rise time] —
Fall Time (typical) [DATA_NEEDED: fall time] —
Propagation Delay (typical) 100 ns —
Channel-to-Channel Delay Match [DATA_NEEDED: channel-to-channel delay match] —
Under-Voltage Lockout Yes (both channels) —
Bootstrap Diode Integrated Integrated (BSD)
Input Logic Compatibility 3.3 V / 5 V CMOS 3.3 V CMOS / LSTTL (Schmitt-trigger)
Betriebstemperatur -40C to +125C —
Gehäuse PG-DSO-14 (14-pin SOIC) PG-DSO-8-910 (DSO-8)
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL level] 2
RoHS-Status ROHS3 Compliant Compliant
Negative Gate Drive Robustness -0.7 V —
Driver Configuration — Half-Bridge (High-Side + Low-Side)
Technology — Infineon thin-film SOI
Blocking Voltage (High-Side) — 650 V
Source Current (typ.) — 0.36 A
Sink Current (typ.) — 0.7 A
VCC Supply Range — 10 V to 17 V
Undervoltage Lockout (UVLO) — Yes (VCC and VB-VS)
Interlock / Anti-Shoot-Through — Built-in
Propagation Delay (typ.) — 200 ns
Betriebstemperaturbereich — -40C to +125C

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