2ED2108S06FXUMA1 vs 2ED21834S06JXUMA1 Vergleich
Detaillierter Direktvergleich von 2ED2108S06FXUMA1 von Infineon und 2ED21834S06JXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2ED2108S06FXUMA1 | 2ED21834S06JXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,30 | $0,89 |
| Driver Configuration | Half-Bridge | — |
| Number of Drivers | 1 | — |
| Gate Type | N-Channel MOSFET, IGBT | — |
| Anzahl der Ausgänge | 2 (high-side + low-side) | — |
| Logic Input | Non-Inverting | — |
| Input Voltage (VCC) | 10 V to 20 V | — |
| High-Side Bootstrap Voltage Rating | 650 V | — |
| Peak Source Current (typ.) | 0.29 A | — |
| Peak Sink Current (typ.) | 0.7 A | — |
| Integrated Bootstrap Diode | Yes | Yes |
| Undervoltage Lockout (UVLO) | Yes (VCC and VB) | — |
| Propagation Delay (typ.) | [DATA_NEEDED: propagation delay ns] | — |
| Rise / Fall Time (typ.) | [DATA_NEEDED: tr/tf ns] | — |
| Betriebstemperatur | -40 C to +125 C | — |
| Gehäuse | PG-DSO-8-53 (DSO-8) | PG-DSO-14-49 (DSO-14) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant | Compliant |
| Product Type | — | Half-Bridge Gate Driver IC |
| Configuration | — | Half-bridge (high-side + low-side) |
| Maximum Offset Voltage (VBS) | — | 650 V |
| Typical Sink Current | — | 2.5 A |
| Typical Source Current | — | 2.5 A |
| Input Logic | — | Non-Inverting |
| Technology | — | SOI (Silicon-On-Insulator) high-voltage |
| Under-Voltage Lockout (UVLO) | — | Yes (VCC and VBS) |
| Anzahl der Pins | — | 14 |
| Betriebstemperaturbereich | — | -40 °C to +125 °C |
| Standard Reel Quantity | — | 3000 |