2ED2108S06FXUMA1 vs 2ED21834S06JXUMA1 Comparison

Detailed side-by-side comparison of 2ED2108S06FXUMA1 by Infineon and 2ED21834S06JXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2ED2108S06FXUMA1 2ED21834S06JXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Driver Configuration Half-Bridge —
Number of Drivers 1 —
Gate Type N-Channel MOSFET, IGBT —
Number of Outputs 2 (high-side + low-side) —
Logic Input Non-Inverting —
Input Voltage (VCC) 10 V to 20 V —
High-Side Bootstrap Voltage Rating 650 V —
Peak Source Current (typ.) 0.29 A —
Peak Sink Current (typ.) 0.7 A —
Integrated Bootstrap Diode Yes Yes
Undervoltage Lockout (UVLO) Yes (VCC and VB) —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay ns] —
Rise / Fall Time (typ.) [DATA_NEEDED: tr/tf ns] —
Operating Temperature -40 C to +125 C —
Package PG-DSO-8-53 (DSO-8) PG-DSO-14-49 (DSO-14)
Mounting Type Surface Mount Surface Mount
MSL Level 1 —
RoHS Status Compliant Compliant
Product Type — Half-Bridge Gate Driver IC
Configuration — Half-bridge (high-side + low-side)
Maximum Offset Voltage (VBS) — 650 V
Typical Sink Current — 2.5 A
Typical Source Current — 2.5 A
Input Logic — Non-Inverting
Technology — SOI (Silicon-On-Insulator) high-voltage
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Number of Pins — 14
Operating Temperature Range — -40 °C to +125 °C
Standard Reel Quantity — 3000

Datasheets & Resources

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