2EDL8033G4BXTMA1 vs 2EDL6014ACG2DXTMA1 Vergleich
Detaillierter Direktvergleich von 2EDL8033G4BXTMA1 von Infineon und 2EDL6014ACG2DXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
2EDL6014ACG2DXTMA1 - 120V Half-Bridge Gate Driver, 4A/6A | Infineon
2EDL6014ACG2DXTMA1 ✓ AktivSpezifikationsvergleich
| Parameter | 2EDL8033G4BXTMA1 | 2EDL6014ACG2DXTMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,49 | $1,18 |
| Topologie | Half-bridge (high-side + low-side) | — |
| Maximum Bootstrap Voltage (VBS) | 120 V | — |
| Source Drive Current | 3 A | — |
| Sink Drive Current | 4 A | — |
| Number of Channels | 2 (HS + LS) | 2 (high-side + low-side) |
| Isolation Type | Junction-isolated (non-galvanic) | Isolated (level-shifted floating high-side) |
| Input Logic Compatibility | TTL | — |
| Input Common-Mode Range | -10 V to 20 V | — |
| Input Type | Independent HS and LS | — |
| Integrated Dead-Time Control | Yes (programmable) | — |
| Under-Voltage Lockout (VCC/VDD) | Yes | — |
| Under-Voltage Lockout (VBS/High-Side) | Yes | — |
| Shoot-Through Protection | Yes | — |
| Gehäuse | PG-VDSON-8-5 | 11-WQFN (2.2 x 2.2 mm) with exposed pad |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | — |
| Marking Code | 2ED8033G4B | — |
| Driver Type | — | Half-Bridge Gate Driver |
| Ausgangskonfiguration | — | Non-Inverting |
| High-Side Voltage Rating | — | 120 V |
| Source Output Current | — | 4 A |
| Sink Output Current | — | 6 A |
| Supply Voltage (VDD) | — | 2.97 V to 5.5 V |
| Rise Time (typ.) | — | 4.2 ns |
| Fall Time (typ.) | — | 3.8 ns |
| Betriebstemperatur | — | -40 C to +125 C |
| Packing Method | — | Tape & Reel |
| Technology Family | — | EiceDRIVER 2EDL |