2EDL8033G4BXTMA1 vs 2EDL6014ACG2DXTMA1 对比

详细并排对比 2EDL8033G4BXTMA1 出自 Infineon 和 2EDL6014ACG2DXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2EDL8033G4BXTMA1 2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 ✓ 量产中

规格对比

参数 2EDL8033G4BXTMA1 2EDL6014ACG2DXTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.49 $1.18
拓扑 Half-bridge (high-side + low-side) —
Maximum Bootstrap Voltage (VBS) 120 V —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Number of Channels 2 (HS + LS) 2 (high-side + low-side)
Isolation Type Junction-isolated (non-galvanic) Isolated (level-shifted floating high-side)
Input Logic Compatibility TTL —
Input Common-Mode Range -10 V to 20 V —
Input Type Independent HS and LS —
Integrated Dead-Time Control Yes (programmable) —
Under-Voltage Lockout (VCC/VDD) Yes —
Under-Voltage Lockout (VBS/High-Side) Yes —
Shoot-Through Protection Yes —
封装 PG-VDSON-8-5 11-WQFN (2.2 x 2.2 mm) with exposed pad
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant —
Marking Code 2ED8033G4B —
Driver Type — Half-Bridge Gate Driver
输出配置 — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
工作温度 — -40 C to +125 C
Packing Method — Tape & Reel
Technology Family — EiceDRIVER 2EDL

数据手册与资源

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