2EDN7533RXTMA1 vs 1EDN7146UXTSA1 Vergleich
Detaillierter Direktvergleich von 2EDN7533RXTMA1 von Infineon und 1EDN7146UXTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2EDN7533RXTMA1 | 1EDN7146UXTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,55 | $0,82 |
| Funktion | Dual-channel low-side gate driver | — |
| Number of Channels | 2 | — |
| Input Polarity | Inverting | — |
| Peak Source/Sink Output Current | 5 A | — |
| Output Resistance (Pull-up, typ.) | 0.5 ohm | — |
| Output Resistance (Pull-down, typ.) | 0.3 ohm | — |
| Propagation Delay (typ.) | 19 ns | — |
| Channel-to-Channel Delay Matching | 1.3 ns (typ.) | — |
| Rise/Fall Time | 1.7 ns / 1.5 ns (typ., 1 nF load) | — |
| Input Logic Compatibility | LV-TTL | — |
| Input Voltage Tolerance | -12 V to +22 V | — |
| Supply Voltage VDD (recommended) | 4.5 V to 20 V | — |
| Supply Voltage VDD (absolute max) | 25 V | — |
| Under-Voltage Lockout | Yes (per channel) | — |
| Betriebs-Sperrschichttemperatur | -40 C to +150 C | — |
| Gehäuse | PG-TSSOP-8 (HTSSOP) with exposed pad | PG-VSON-1 (6-pin with exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Driver Type | — | Single-channel high-side TDI gate driver |
| Maximum Blocking Voltage | — | 200 V |
| Input Configuration | — | Truly differential (TDI) |
| Output Current (Source / Sink) | — | 1.5 A / 2.5 A |
| Propagation Delay | — | [DATA_NEEDED: typical propagation delay ns] |
| Anstiegszeit | — | [DATA_NEEDED: typical rise time ns] |
| Abfallzeit | — | [DATA_NEEDED: typical fall time ns] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range V] |
| Betriebstemperaturbereich | — | -40C to +125C |
| Target Transistor | — | GaN SG HEMT or power MOSFET |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| Topology Support | — | Half-bridge, low-side, high-side |