2EDN7533RXTMA1 vs 1EDN7146UXTSA1 对比

详细并排对比 2EDN7533RXTMA1 出自 Infineon 和 1EDN7146UXTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2EDN7533RXTMA1 2EDN7533RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon

2EDN7533RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon

2EDN7533RXTMA1 ✓ 量产中
Infineon
1EDN7146UXTSA1 1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 ✓ 量产中

规格对比

参数 2EDN7533RXTMA1 1EDN7146UXTSA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.55 $0.82
功能 Dual-channel low-side gate driver —
Number of Channels 2 —
Input Polarity Inverting —
Peak Source/Sink Output Current 5 A —
Output Resistance (Pull-up, typ.) 0.5 ohm —
Output Resistance (Pull-down, typ.) 0.3 ohm —
Propagation Delay (typ.) 19 ns —
Channel-to-Channel Delay Matching 1.3 ns (typ.) —
Rise/Fall Time 1.7 ns / 1.5 ns (typ., 1 nF load) —
Input Logic Compatibility LV-TTL —
Input Voltage Tolerance -12 V to +22 V —
Supply Voltage VDD (recommended) 4.5 V to 20 V —
Supply Voltage VDD (absolute max) 25 V —
Under-Voltage Lockout Yes (per channel) —
工作结温 -40 C to +150 C —
封装 PG-TSSOP-8 (HTSSOP) with exposed pad PG-VSON-1 (6-pin with exposed pad)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
Driver Type — Single-channel high-side TDI gate driver
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
上升时间 — [DATA_NEEDED: typical rise time ns]
下降时间 — [DATA_NEEDED: typical fall time ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
工作温度范围 — -40C to +125C
Target Transistor — GaN SG HEMT or power MOSFET
MSL 等级 — [DATA_NEEDED: MSL rating]
Topology Support — Half-bridge, low-side, high-side

数据手册与资源

浏览全部产品 创建 BOM 获取报价