2N7002H6327XTSA2 vs BSS214NH6327XTSA1 Vergleich
Detaillierter Direktvergleich von 2N7002H6327XTSA2 von Infineon und BSS214NH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2N7002H6327XTSA2 | BSS214NH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,08 | $0,09 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS (Planar) | OptiMOS 2 (planar N-channel) |
| Drain-Source Voltage (VDS) | 60 V | 20 V |
| Continuous Drain Current (ID) | 300 mA (Ta) | 1.5 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Betriebstemperaturbereich | -55C to +150C (Tj) | -55C to +150C (junction) |
| Gehäuse | PG-SOT23 (SOT-23-3) | SOT-23 (PG-SOT23), 3 pins |
| Montageart | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Qualification | Industrial / Commercial Grade | AEC-Q101 (Automotive) |
| FET Type | — | N-Channel |
| Drain-Source On-Resistance (RDS(on) max) | — | 250 mOhm at VGS = 4.5 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate-Source Voltage (VGS max) | — | ±12 V (recommended) |
| Lead Finish | — | Pb-free lead plating (matte tin) |
| ESD Protection | — | Yes (gate ESD diode) |