2N7002H6327XTSA2 - 60V N-Ch OptiMOS MOSFET SOT-23 | Infineon
Teilenummer: 2N7002H6327XTSA2 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.34 | $3,40 |
| 100 | $0.21 | $21,00 |
| 500 | $0.15 | $75,00 |
| 1.000 | $0.11 | $110,00 |
| 3.000 | $0.08 | $240,00 |
2N7002H6327XTSA2 Übersicht
An N-channel enhancement-mode MOSFET is a voltage-controlled three-terminal device in which a positive gate-to-source voltage creates an inversion layer, allowing current to flow from drain to source. Within the broader semiconductor hierarchy, this part belongs to the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) family, the discrete transistor category, and ultimately the power-switching semiconductor class. Small-signal MOSFETs like the 2N7002 are optimized for sub-1 A switching rather than power conversion, making them ubiquitous in logic-level translation, level shifting, relay driving, and low-side load switching.
Key features of the 2N7002H6327XTSA2 include a gate threshold voltage typically around 2.5 V, low gate charge for fast switching at low drive currents, and an ESD-protected gate structure per Infineon's OptiMOS process. The device's 500 mW power dissipation rating and standard SOT-23-3 footprint enable placement adjacent to microcontrollers or ASICs. Its logic-level compatibility with 3.3 V and 5 V microcontrollers makes it a drop-in companion for GPIO-driven loads.
The 2N7002H6327XTSA2 is built on Infineon's planar OptiMOS technology, optimized for low on-resistance per unit area at small die sizes. The result is a robust, production-proven process node widely second-sourced across the industry. Compared with older BJT-based 2N7000 parts, the MOSFET architecture eliminates base current and provides higher input impedance, simplifying microcontroller interface design.
Typical applications include low-side switching for relays, solenoids, LEDs, and small DC motors; level shifters between 3.3 V microcontrollers and 5 V or 12 V loads; signal multiplexing and analog switching; battery protection circuits; and as a generic interface buffer in industrial controls and consumer electronics.
When designing with this part, ensure VGS does not exceed the maximum gate-source voltage rating and use a gate resistor (typically 100 ohm) to limit ringing. For inductive loads, add a flyback diode to protect the drain from voltage transients exceeding 60 V.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement the manufacturer datasheet.
Drop-in-Alternativen für 2N7002H6327XTSA2 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit 2N7002H6327XTSA2 (gleiche Bauform und Footprint) – abweichend in Drain-Source Voltage (VDS), Technology, Package, Qualification, Continuous Drain Current (ID).
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
2N7002H6327XTSA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
BSS308PEH6327XTSA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$0.11 / Stück
Datenblatt ansehen →2N7002LT1G
✅ Drop-In✓ Auf Lager
$0.02 / Stück
Datenblatt ansehen →2N7002-7-F
✅ Drop-In✓ Auf Lager
$0.08 / Stück
Datenblatt ansehen →2N7002,215
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
VB162K
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
2N7002H6327XTSA2 Grenzwerte & elektrische Eigenschaften
| Transistortyp | N-Channel MOSFET |
| Technology | OptiMOS (Planar) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 300 mA (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V |
| Betriebstemperaturbereich | -55C to +150C (Tj) |
| Gehäuse | PG-SOT23 (SOT-23-3) |
| Montageart | Surface Mount |
| Channel Mode | Enhancement |
| MSL-Level | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant |
| Lead-Free | Yes |
| Qualification | Industrial / Commercial Grade |
2N7002H6327XTSA2 Pin-Konfiguration
| Pin 1 | Gate — MOSFET gate control input |
| Pin 2 | Source — MOSFET source (typically connected to ground in low-side switching) |
| Pin 3 | Drain — MOSFET drain (connects to load) |
Typische Anwendungen
2N7002H6327XTSA2 ist geeignet für 6 Anwendungs: Low-Side Relay and Solenoid Driver, Logic Level Translation (3.3V to 5V/12V), LED Driver and Backlight Switching, Battery Protection and Load Disconnect, Signal Multiplexing and Analog Switching, GPIO Expansion Buffer for Microcontrollers.
Low-Side Relay and Solenoid Driver
The 2N7002H6327XTSA2 serves as a low-side switch for 5 V/12 V relays and solenoids in industrial controls and automotive modules. With 60 V VDS, it tolerates the inductive flyback of small relays (typically < 60 V) when paired with a flyback diode. The 300 mA continuous drain current supports standard signal relays (40-70 mA coil current). The logic-level gate threshold around 2.5 V allows direct drive from 3.3 V or 5 V microcontroller GPIOs without level shifting. Place the source to ground, drain to the load, and gate to the GPIO through a 100 ohm series resistor to limit ringing.
Empfohlen
Logic Level Translation (3.3V to 5V/12V)
As a level shifter, the 2N7002H6327XTSA2 connects a 3.3 V microcontroller GPIO to a 5 V or 12 V load by switching the higher-voltage rail on the low-side. The N-channel MOSFET's drain connects to the load, source to ground, and gate to the GPIO. With VGS(th) around 2.5 V, the device fully turns on at 3.3 V logic. The 60 V VDS rating protects against 12 V automotive transients. This application commonly appears in I2C bus level translation and SPI peripheral interfacing where the target peripheral operates at higher voltage than the host MCU.
Empfohlen
LED Driver and Backlight Switching
The 2N7002H6327XTSA2 switches LED strings in indicator lights, status panels, and small backlight circuits. With 300 mA continuous drain current, it can drive LED arrays drawing up to 250 mA after derating. The low RDS(on) of 3 ohm at 10 V VGS minimizes voltage drop and power dissipation - a typical LED string at 20 mA drops only 60 mV across the MOSFET. The fast switching enables PWM dimming up to 100 kHz for brightness control. Place a current-limiting resistor in series with the LED load between the supply rail and the drain.
Empfohlen
Battery Protection and Load Disconnect
In single-cell Li-ion battery management circuits, the 2N7002H6327XTSA2 acts as a low-side load disconnect switch between the battery negative terminal and system ground. The 60 V VDS provides ample margin against charger transients, while 300 mA supports protected load current for IoT devices and wearables. Gate control via a battery management IC or push-button circuit enables ship-mode and over-discharge protection. The logic-level threshold allows direct connection to low-power microcontrollers monitoring battery voltage.
Empfohlen
Signal Multiplexing and Analog Switching
The 2N7002H6327XTSA2 functions as an analog switch for low-frequency signal routing in test equipment, audio multiplexers, and instrumentation. With its enhancement-mode N-channel structure, the on-resistance of 3 ohm introduces only minor attenuation for signals up to several hundred kHz. Gate control via a logic-level signal selects between signal paths. Designers often configure two 2N7002 devices back-to-back (sources tied) for bidirectional AC signal switching. The SOT-23-3 footprint enables dense multiplexer arrays.
Empfohlen
GPIO Expansion Buffer for Microcontrollers
When a microcontroller's GPIO current capability is insufficient for direct load driving (typical MCUs source 4-20 mA), the 2N7002H6327XTSA2 buffers the output to switch heavier loads up to 300 mA. The high gate input impedance draws negligible current from the MCU, preserving GPIO budget. This application is common in industrial PLCs, sensor hubs, and IoT edge devices where a low-power MCU controls fans, buzzers, or motor drivers indirectly through the MOSFET. The 60 V rating supports 24 V industrial bus voltages.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für 2N7002H6327XTSA2 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | 2N7002LT1G | 2N7002-7-F | 2N7002,215 | VB162K |
|---|---|---|---|---|---|
| Package | PG-SOT23 (SOT-23-3) | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same |
| Brand | Infineon Technologies | onsemi | Diodes Incorporated | NXP Semiconductors | VBsemi |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V | 60 V | 60 V |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Pinout (Gate/Source/Drain) | 1-2-3 (JEDEC standard) | 1-2-3 (JEDEC standard) - same | 1-2-3 (JEDEC standard) - same | 1-2-3 (JEDEC standard) - same | 1-2-3 (JEDEC standard) - same |
Wichtigste Unterscheidungsmerkmale
- Automotive-qualified OptiMOS process (vs. 2N7002LT1G (onsemi))
- Higher continuous drain current (vs. 2N7002-7-F (Diodes Incorporated))
- Industry-standard JEDEC pinout (vs. VB162K (VBsemi))
Designhinweise
Estimated: At 300 mA continuous drain current and RDS(on) of 3 ohm, conduction power dissipation is approximately 0.27 W - within the 500 mW package rating but only with adequate PCB copper. On a minimal SOT-23 footprint (JEDEC EIA-321), theta_JA is around 350 C/W, which would yield a 95C temperature rise above ambient. For sustained high-current operation, increase copper area on source pad or reduce switching frequency.
Always add a 100 ohm gate series resistor to limit ringing caused by the gate-drain capacitance (Cgd) and PCB trace inductance. Place a 10 kohm pull-down resistor from gate to source to ensure the MOSFET stays off during MCU power-up or reset, preventing unintended load activation. Keep the gate trace short and route it away from drain switching nodes to minimize dv/dt coupling.
For inductive loads (relays, solenoids, motors), always add a flyback diode (e.g., 1N4148 or Schottky) across the load with cathode to the positive rail. Without this diode, the inductive kickback can exceed 60 V and destroy the MOSFET. Even small inductors (10-100 uH) at 300 mA can produce destructive voltage spikes above 100 V if unclamped.
Estimated: The PG-SOT23 package has a maximum junction temperature of 150C. At 500 mW dissipation and the standard JEDEC 4-layer PCB copper area (JEDEC 51-3, 1 oz copper), the thermal resistance theta_JA is approximately 350 C/W. Above 2.5 W, the junction rises above 150C. For sustained operation above 200 mA, increase copper area on drain/source pads to at least 100 mm^2.
Compliance-Informationen
RoHS and REACH compliant per Infineon product page. H6327 suffix indicates automotive-grade manufacturing but AEC-Q100 specific qualification should be verified against the exact datasheet revision if automotive compliance is required for the end application.
