5CSEBA5U19A7N vs 5CSEBA4U19A7N Vergleich
Detaillierter Direktvergleich von 5CSEBA5U19A7N von Intel und 5CSEBA4U19A7N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Intel
5CSEBA5U19A7N - Cyclone V SE SoC FPGA, 85K LE, Dual ARM Cortex-A9 | Intel
5CSEBA5U19A7N ✓ AktivSpezifikationsvergleich
| Parameter | 5CSEBA5U19A7N | 5CSEBA4U19A7N |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $152,40 | $99,90 |
| Family | Cyclone V SE SoC FPGA | Cyclone V SE SoC FPGA |
| Logic Elements | 85,000 | 40 K |
| Process Technology | 28 nm low-power | — |
| Hard Processor System (HPS) | Dual ARM Cortex-A9 MPCore with CoreSight | — |
| HPS Maximum Frequency | 700 MHz | — |
| Gehäuse | 484-pin UBG A (19x19 mm) | 484-UBGA (U19), 19x19 mm, 1.0 mm pitch |
| Montageart | Surface Mount (BGA) | Surface Mount (BGA) |
| Supply Voltage (Core) | 1.1 V | — |
| Operating Temperature Grade | Automotive (AEC-Q100) -40C to +125C | — |
| I/O Count | 66 (per source listing) | — |
| Memory Interface | DDR3 controller in HPS; external memory interface in FPGA fabric | — |
| DSP Blocks | Variable-precision DSP blocks | — |
| Configuration / Boot Modes | NAND, QSPI, SD/MMC | — |
| RoHS-Status | Compliant (per Ampheo listing) | Compliant |
| Automotive Qualification | AEC-Q100 (Automotive grade, indicated by 'A' in part number) | — |
| Hard Processor System | — | Dual ARM Cortex-A9 MPCore with CoreSight |
| Adaptive Logic Modules | — | [DATA_NEEDED: ALM count] |
| Embedded Memory | — | 3.4 Mbits (M9K) |
| DSP Blocks (18x18 Multipliers) | — | 224 |
| PLLs | — | [DATA_NEEDED: PLL count] |
| HPS Maximum Application Clock | — | 925 MHz |
| Memory Interfaces | — | DDR3, DDR3L, LPDDR2 (via HPS); soft DDR3/2 in FPGA |
| User I/O | — | 161 |
| Betriebs-Sperrschichttemperatur | — | -40C to +125C (automotive) / -40C to +100C (industrial) |
| Process Node | — | TSMC 28 nm low-power |
| Core Voltage | — | 1.1 V (typical) |
| MSL-Level | — | 3 (168 hours) |