5CSEBA5U19A7N vs 5CSEBA4U19A7N Comparação
Comparação detalhada lado a lado de 5CSEBA5U19A7N por Intel e 5CSEBA4U19A7N por Intel. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Intel
5CSEBA5U19A7N - Cyclone V SE SoC FPGA, 85K LE, Dual ARM Cortex-A9 | Intel
5CSEBA5U19A7N ✓ AtivoComparação de especificações
| Parâmetro | 5CSEBA5U19A7N | 5CSEBA4U19A7N |
|---|---|---|
| Marca | Intel | Intel |
| Categoria | FPGA & CPLD | FPGA & CPLD |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $152,40 | $99,90 |
| Family | Cyclone V SE SoC FPGA | Cyclone V SE SoC FPGA |
| Logic Elements | 85,000 | 40 K |
| Process Technology | 28 nm low-power | — |
| Hard Processor System (HPS) | Dual ARM Cortex-A9 MPCore with CoreSight | — |
| HPS Maximum Frequency | 700 MHz | — |
| Encapsulamento | 484-pin UBG A (19x19 mm) | 484-UBGA (U19), 19x19 mm, 1.0 mm pitch |
| Tipo de montagem | Surface Mount (BGA) | Surface Mount (BGA) |
| Supply Voltage (Core) | 1.1 V | — |
| Operating Temperature Grade | Automotive (AEC-Q100) -40C to +125C | — |
| I/O Count | 66 (per source listing) | — |
| Memory Interface | DDR3 controller in HPS; external memory interface in FPGA fabric | — |
| DSP Blocks | Variable-precision DSP blocks | — |
| Configuration / Boot Modes | NAND, QSPI, SD/MMC | — |
| Status RoHS | Compliant (per Ampheo listing) | Compliant |
| Automotive Qualification | AEC-Q100 (Automotive grade, indicated by 'A' in part number) | — |
| Hard Processor System | — | Dual ARM Cortex-A9 MPCore with CoreSight |
| Adaptive Logic Modules | — | [DATA_NEEDED: ALM count] |
| Embedded Memory | — | 3.4 Mbits (M9K) |
| DSP Blocks (18x18 Multipliers) | — | 224 |
| PLLs | — | [DATA_NEEDED: PLL count] |
| HPS Maximum Application Clock | — | 925 MHz |
| Memory Interfaces | — | DDR3, DDR3L, LPDDR2 (via HPS); soft DDR3/2 in FPGA |
| User I/O | — | 161 |
| Temperatura de junção de operação | — | -40C to +125C (automotive) / -40C to +100C (industrial) |
| Process Node | — | TSMC 28 nm low-power |
| Core Voltage | — | 1.1 V (typical) |
| Nível MSL | — | 3 (168 hours) |