ATSAMG55J19A-MU vs ATSAMG55J19A-AU Vergleich

Detaillierter Direktvergleich von ATSAMG55J19A-MU von Microchip Technology und ATSAMG55J19A-AU von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
ATSAMG55J19A-MU ATSAMG55J19A-MU - Cortex-M4 MCU 120MHz 512KB Flash 64-QFN | Microchip

ATSAMG55J19A-MU - Cortex-M4 MCU 120MHz 512KB Flash 64-QFN | Microchip

ATSAMG55J19A-MU ✓ Aktiv
Microchip Technology
ATSAMG55J19A-AU ATSAMG55J19A-AU - 120MHz Cortex-M4 MCU 512KB Flash | Microchip

ATSAMG55J19A-AU - 120MHz Cortex-M4 MCU 512KB Flash | Microchip

ATSAMG55J19A-AU ✓ Aktiv

Spezifikationsvergleich

Parameter ATSAMG55J19A-MU ATSAMG55J19A-AU
Marke Microchip Technology Microchip Technology
Kategorie Microcontrollers Microcontrollers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $5,42 $3,99
Core Processor ARM Cortex-M4F (with FPU) —
Core Size 32-Bit —
Maximum CPU Speed 120 MHz —
Program Memory Size 512 KB Flash —
RAM Size Up to 176 KB SRAM —
Versorgungsspannung 3.0 V to 3.6 V —
Betriebstemperatur -40C to +85C (Industrial) -40 C to +85 C (industrial)
Gehäuse 64-pin QFN (7.5x7.5 mm) 64-LQFP (10x10 mm)
Montageart Surface Mount Surface Mount
USB Interface USB 2.0 Full-Speed with on-chip PHY —
Audio Interface I2S / TDM (up to 2 instances) I2S with PDM/TDM and sample-rate converter
ADC [DATA_NEEDED: ADC resolution and channel count] 12-bit SAR
Active Current (picoPower) 100 uA/MHz —
Deep Sleep Current <7 uA with SRAM retention Below 7 uA with SRAM retention
Wake-up Time Down to 3 us from deep sleep —
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL moisture sensitivity level] —
Core Architecture — ARM Cortex-M4 with FPU
Core Clock Speed (max) — 120 MHz
Instruction Set — 32-bit RISC + DSP extensions + FPU (single-precision)
Program Flash Memory — 512 KB (512K x 8)
SRAM (Total) — 160 KB
Backup SRAM with Retention — 16 KB (retained in deep sleep)
Supply Voltage (VDDIO/VDDCORE) — 1.62 V to 3.6 V
USB — USB 2.0 Full-Speed device/host
Communication Peripherals — USART/UART, SPI, TWI (I2C), I2S, HS USB
External Bus Interface (EBI) — Yes (for SRAM/SDRAM/NOR Flash expansion)
Active Power Consumption — Down to 100 uA/MHz
Wake-up Time (deep sleep to first instruction) — Down to 3 us
Lifecycle / New Design Recommendation — Active (new designs: consider ATSAMG55J19B Revision B)

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