BCY79-VII-TIN-LEAD vs BCY79-VII Vergleich

Detaillierter Direktvergleich von BCY79-VII-TIN-LEAD von Central Semiconductor und BCY79-VII von Central Semiconductor. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Central Semiconductor
BCY79-VII-TIN-LEAD BCY79-VII-TIN-LEAD - PNP 45V 100mA TO-18 BJT | Central Semiconductor

BCY79-VII-TIN-LEAD - PNP 45V 100mA TO-18 BJT | Central Semiconductor

BCY79-VII-TIN-LEAD ✓ Aktiv
Central Semiconductor
BCY79-VII BCY79-VII - PNP 45V 100mA Low Noise TO-18 | Central Semiconductor

BCY79-VII - PNP 45V 100mA Low Noise TO-18 | Central Semiconductor

BCY79-VII ✗ Abgekündigt

Spezifikationsvergleich

Parameter BCY79-VII-TIN-LEAD BCY79-VII
Marke Central Semiconductor Central Semiconductor
Kategorie Transistors Transistors
Lebenszyklusstatus Aktiv Ende des Lebenszyklus
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,72 $0,72
Transistortyp PNP Bipolar Junction Transistor (BJT), Single Bipolar (BJT), epitaxial planar silicon
Technology Silicon Planar Epitaxial —
Kollektor-Basis-Spannung (Vcbo) 45 V 45 V
Emitter-Basis-Spannung (Vebo) 5.0 V 5 V
Kollektorstrom (Ic) 100 mA —
Power Dissipation 340 mW (derated), 1 W case-related rating per distributor listing —
DC Current Gain Group VII —
Gehäuse TO-18 metal can, 3-lead TO-18 (TO-206AA), hermetically sealed metal case
Montageart Through Hole Through Hole
Finish Tin/Lead (TIN/LEAD) plated leads —
Polarity PNP PNP
Configuration Single transistor Single transistor, 3-pin
Typical Use Low-noise audio amplifier input and driver stages —
Manufacturer Central Semiconductor Corp —
DC Current Gain (hFE) [DATA_NEEDED: hFE min/max for group VII] —
Kollektor-Emitter-Spannung (Vceo) [DATA_NEEDED: VCEO rating] [DATA_NEEDED: VCEO]
Betriebstemperatur [DATA_NEEDED: operating temperature range] —
Maximum Collector Current (IC) — 100 mA
Power Dissipation (PD) — 340 mW
Total Device Dissipation (DigiKey listing) — 1 W
Übergangsfrequenz (ft) — 100 MHz
hFE Gain Group — VII (BCY79 VII/VIII/IX/X binning)
Maximum Operating Temperature — 200 C (junction, per family datasheet)
Application — Low noise amplifier and switching
Lead-Free / RoHS Option — BCY79-VII PBFREE variant available (DigiKey/Mouser)
Series — BCY78 / BCY79 (VII, VIII, IX, X)

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern