BCY79-VII-TIN-LEAD vs BCY79-VII Comparaison
Comparaison détaillée côte à côte de BCY79-VII-TIN-LEAD par Central Semiconductor et BCY79-VII par Central Semiconductor. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Central Semiconductor
BCY79-VII-TIN-LEAD - PNP 45V 100mA TO-18 BJT | Central Semiconductor
BCY79-VII-TIN-LEAD ✓ ActifCentral Semiconductor
BCY79-VII - PNP 45V 100mA Low Noise TO-18 | Central Semiconductor
BCY79-VII ✗ Fin de vieComparaison des spécifications
| Paramètre | BCY79-VII-TIN-LEAD | BCY79-VII |
|---|---|---|
| Marque | Central Semiconductor | Central Semiconductor |
| Catégorie | Transistors | Transistors |
| Statut du cycle de vie | Actif | Fin de vie |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,72 | $0,72 |
| Type de transistor | PNP Bipolar Junction Transistor (BJT), Single | Bipolar (BJT), epitaxial planar silicon |
| Technology | Silicon Planar Epitaxial | — |
| Tension collecteur-base (Vcbo) | 45 V | 45 V |
| Tension émetteur-base (Vebo) | 5.0 V | 5 V |
| Courant de collecteur (Ic) | 100 mA | — |
| Power Dissipation | 340 mW (derated), 1 W case-related rating per distributor listing | — |
| DC Current Gain Group | VII | — |
| Boîtier | TO-18 metal can, 3-lead | TO-18 (TO-206AA), hermetically sealed metal case |
| Type de montage | Through Hole | Through Hole |
| Finish | Tin/Lead (TIN/LEAD) plated leads | — |
| Polarity | PNP | PNP |
| Configuration | Single transistor | Single transistor, 3-pin |
| Typical Use | Low-noise audio amplifier input and driver stages | — |
| Manufacturer | Central Semiconductor Corp | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE min/max for group VII] | — |
| Tension collecteur-émetteur (Vceo) | [DATA_NEEDED: VCEO rating] | [DATA_NEEDED: VCEO] |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Maximum Collector Current (IC) | — | 100 mA |
| Power Dissipation (PD) | — | 340 mW |
| Total Device Dissipation (DigiKey listing) | — | 1 W |
| Fréquence de transition (ft) | — | 100 MHz |
| hFE Gain Group | — | VII (BCY79 VII/VIII/IX/X binning) |
| Maximum Operating Temperature | — | 200 C (junction, per family datasheet) |
| Application | — | Low noise amplifier and switching |
| Lead-Free / RoHS Option | — | BCY79-VII PBFREE variant available (DigiKey/Mouser) |
| Series | — | BCY78 / BCY79 (VII, VIII, IX, X) |