BCY79-VII-TIN-LEAD vs BCY79-VII Comparación
Comparación detallada lado a lado de BCY79-VII-TIN-LEAD por Central Semiconductor y BCY79-VII por Central Semiconductor. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Central Semiconductor
BCY79-VII-TIN-LEAD - PNP 45V 100mA TO-18 BJT | Central Semiconductor
BCY79-VII-TIN-LEAD ✓ ActivoCentral Semiconductor
BCY79-VII - PNP 45V 100mA Low Noise TO-18 | Central Semiconductor
BCY79-VII ✗ Fin de vidaComparación de especificaciones
| Parámetro | BCY79-VII-TIN-LEAD | BCY79-VII |
|---|---|---|
| Marca | Central Semiconductor | Central Semiconductor |
| Categoría | Transistors | Transistors |
| Estado del ciclo de vida | Activo | Fin de vida |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,72 | $0,72 |
| Tipo de transistor | PNP Bipolar Junction Transistor (BJT), Single | Bipolar (BJT), epitaxial planar silicon |
| Technology | Silicon Planar Epitaxial | — |
| Tensión colector-base (Vcbo) | 45 V | 45 V |
| Tensión emisor-base (Vebo) | 5.0 V | 5 V |
| Corriente de colector (Ic) | 100 mA | — |
| Power Dissipation | 340 mW (derated), 1 W case-related rating per distributor listing | — |
| DC Current Gain Group | VII | — |
| Encapsulado | TO-18 metal can, 3-lead | TO-18 (TO-206AA), hermetically sealed metal case |
| Tipo de montaje | Through Hole | Through Hole |
| Finish | Tin/Lead (TIN/LEAD) plated leads | — |
| Polarity | PNP | PNP |
| Configuration | Single transistor | Single transistor, 3-pin |
| Typical Use | Low-noise audio amplifier input and driver stages | — |
| Manufacturer | Central Semiconductor Corp | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE min/max for group VII] | — |
| Tensión colector-emisor (Vceo) | [DATA_NEEDED: VCEO rating] | [DATA_NEEDED: VCEO] |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Maximum Collector Current (IC) | — | 100 mA |
| Power Dissipation (PD) | — | 340 mW |
| Total Device Dissipation (DigiKey listing) | — | 1 W |
| Frecuencia de transición (ft) | — | 100 MHz |
| hFE Gain Group | — | VII (BCY79 VII/VIII/IX/X binning) |
| Maximum Operating Temperature | — | 200 C (junction, per family datasheet) |
| Application | — | Low noise amplifier and switching |
| Lead-Free / RoHS Option | — | BCY79-VII PBFREE variant available (DigiKey/Mouser) |
| Series | — | BCY78 / BCY79 (VII, VIII, IX, X) |