BFU520R vs BFU520AVL Vergleich
Detaillierter Direktvergleich von BFU520R von NXP Semiconductors und BFU520AVL von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BFU520R | BFU520AVL |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Transistors | Transistors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,18 | $0,21 |
| Transistortyp | NPN wideband silicon RF BJT | NPN wideband silicon RF transistor |
| Kollektor-Emitter-Spannung (Vceo) | 12 V | 12 V |
| Collector Current (IC max) | 30 mA | 30 mA (DigiKey listing); 50 mA per Vyrian listing |
| Übergangsfrequenz (ft) | 10.5 GHz | up to 10 GHz |
| Total Power Dissipation | 450 mW | — |
| Frequency Range | up to 2 GHz application range | — |
| Gehäuse | SOT-143B (4-pin, dual-emitter, plastic) | SOT-23 (TO-236AB), 3-pin |
| Montageart | Surface Mount | Surface Mount |
| Noise Performance | Low noise, high breakdown | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Family | BFU5 (BFU5x wideband silicon RF transistors) | — |
| Configuration | Single NPN, dual-emitter | Single |
| Application Class | Small signal to medium power | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | RoHS compliant (per supplier listing) |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Noise Figure | [DATA_NEEDED: noise figure in dB] | [DATA_NEEDED: noise figure] |
| Gain | [DATA_NEEDED: gain] | — |
| Polarity | — | NPN |
| Power Dissipation (Pd) | — | 450 mW |
| Application Band | — | up to 2 GHz (BFU5 family rating) |
| Peak Reflow Temperature | — | 260 C |
| Gain (S21) | — | [DATA_NEEDED: gain] |
| Packaging Suffix | — | VL (Tape & Reel) |