BFU520R vs BFU520AVL Comparaison
Comparaison détaillée côte à côte de BFU520R par NXP Semiconductors et BFU520AVL par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BFU520R | BFU520AVL |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Transistors | Transistors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,18 | $0,21 |
| Type de transistor | NPN wideband silicon RF BJT | NPN wideband silicon RF transistor |
| Tension collecteur-émetteur (Vceo) | 12 V | 12 V |
| Collector Current (IC max) | 30 mA | 30 mA (DigiKey listing); 50 mA per Vyrian listing |
| Fréquence de transition (ft) | 10.5 GHz | up to 10 GHz |
| Total Power Dissipation | 450 mW | — |
| Frequency Range | up to 2 GHz application range | — |
| Boîtier | SOT-143B (4-pin, dual-emitter, plastic) | SOT-23 (TO-236AB), 3-pin |
| Type de montage | Surface Mount | Surface Mount |
| Noise Performance | Low noise, high breakdown | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Family | BFU5 (BFU5x wideband silicon RF transistors) | — |
| Configuration | Single NPN, dual-emitter | Single |
| Application Class | Small signal to medium power | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | RoHS compliant (per supplier listing) |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Noise Figure | [DATA_NEEDED: noise figure in dB] | [DATA_NEEDED: noise figure] |
| Gain | [DATA_NEEDED: gain] | — |
| Polarity | — | NPN |
| Power Dissipation (Pd) | — | 450 mW |
| Application Band | — | up to 2 GHz (BFU5 family rating) |
| Peak Reflow Temperature | — | 260 C |
| Gain (S21) | — | [DATA_NEEDED: gain] |
| Packaging Suffix | — | VL (Tape & Reel) |