BFU520R vs BFU520AVL Comparación
Comparación detallada lado a lado de BFU520R por NXP Semiconductors y BFU520AVL por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BFU520R | BFU520AVL |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Transistors | Transistors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,18 | $0,21 |
| Tipo de transistor | NPN wideband silicon RF BJT | NPN wideband silicon RF transistor |
| Tensión colector-emisor (Vceo) | 12 V | 12 V |
| Collector Current (IC max) | 30 mA | 30 mA (DigiKey listing); 50 mA per Vyrian listing |
| Frecuencia de transición (ft) | 10.5 GHz | up to 10 GHz |
| Total Power Dissipation | 450 mW | — |
| Frequency Range | up to 2 GHz application range | — |
| Encapsulado | SOT-143B (4-pin, dual-emitter, plastic) | SOT-23 (TO-236AB), 3-pin |
| Tipo de montaje | Surface Mount | Surface Mount |
| Noise Performance | Low noise, high breakdown | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Family | BFU5 (BFU5x wideband silicon RF transistors) | — |
| Configuration | Single NPN, dual-emitter | Single |
| Application Class | Small signal to medium power | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | RoHS compliant (per supplier listing) |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Noise Figure | [DATA_NEEDED: noise figure in dB] | [DATA_NEEDED: noise figure] |
| Gain | [DATA_NEEDED: gain] | — |
| Polarity | — | NPN |
| Power Dissipation (Pd) | — | 450 mW |
| Application Band | — | up to 2 GHz (BFU5 family rating) |
| Peak Reflow Temperature | — | 260 C |
| Gain (S21) | — | [DATA_NEEDED: gain] |
| Packaging Suffix | — | VL (Tape & Reel) |