BSC010NE2LSIATMA1 vs BSC015NE2LS5IATMA1 Vergleich

Detaillierter Direktvergleich von BSC010NE2LSIATMA1 von Infineon und BSC015NE2LS5IATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSC010NE2LSIATMA1 BSC015NE2LS5IATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,92 $0,69
Manufacturer Infineon Technologies Infineon Technologies
Series / Family OptiMOS 25V —
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) at TA 38 A —
Continuous Drain Current (ID) at TC 100 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 96 W —
Gehäuse PG-TDSON-8-7 (TDSON-8 EP) PG-TDSON-8-6 (SuperSO8 5x6)
Montageart Surface Mount Surface Mount
Configuration Single N-Channel —
Technology OptiMOS (Trench) OptiMOS 5 trench
Betriebstemperaturbereich -55C to +150C (TJ) -55C to +150C (junction)
Pin-Anzahl 8 8
RoHS-Status Compliant Compliant
Gate Drive Logic-level compatible —
MSL-Level [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Rds(on) at 10V [DATA_NEEDED: Rds(on) at VGS=10V] —
Rds(on) at 4.5V [DATA_NEEDED: Rds(on) at VGS=4.5V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Product Family — OptiMOS 5 25V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 25 V
Continuous Drain Current (ID) at Ta — 33 A
Continuous Drain Current (ID) at Tc — 100 A
On-Resistance RDS(on) Max at VGS=10V — 1.5 mOhm
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 50 W
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg Typ — [DATA_NEEDED: Qg typical value]

Datenblätter & Ressourcen

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