BSC011N03LSATMA1 vs ISC011N03L5SATMA1 Vergleich
Detaillierter Direktvergleich von BSC011N03LSATMA1 von Infineon und ISC011N03L5SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC011N03LSATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,54 | $0,47 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 30V | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TA=25C | 37 A | — |
| Pulsed Drain Current (IDM) | 100 A (TC) | — |
| On-State Resistance (RDS(on)) at VGS=10V | 1.1 mOhm (typ) | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V (typ 1.6 V) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation (PD) at TC=25C | 96 W | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Betriebstemperaturbereich | -55C to +150C | — |
| Gehäuse | PG-TDSON-8-1 (SuperSO8) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Series | — | OptiMOS 5 / StrongIRFET 30 V |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta=25C | — | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 100 A |
| Power Dissipation (PD) @ Ta=25C | — | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | — | 96 W |
| Betriebstemperatur | — | -55 C to +175 C (TJ) |
| Technology | — | OptiMOS 5 trench MOSFET |
| Gate Drive | — | Logic-level compatible |