BSC014N04LSATMA1 vs BSZ017NE2LS5IATMA1 Vergleich
Detaillierter Direktvergleich von BSC014N04LSATMA1 von Infineon und BSZ017NE2LS5IATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC014N04LSATMA1 | BSZ017NE2LS5IATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,74 | $0,64 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 25 V |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 96 W | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Betriebstemperaturbereich | -55C to +175C | — |
| Gehäuse | SuperSO8 (TDSON-8 FL) 5x6 mm | PG-TSDSON-8-FL (8-PowerTDFN) |
| Montageart | Surface Mount | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (unlimited) | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (TA) | — | 27 A |
| Continuous Drain Current (TC) | — | 40 A |
| On-Resistance RDS(on) @ VGS=10V | — | 1.7 mΩ |
| On-Resistance Test Current | — | 20 A |
| Gate-Source Voltage (VGS) Rating | — | ±16 V |
| Gate Threshold Voltage VGS(th) | — | 2 V @ 250 µA |
| Total Gate Charge Qg | — | 30 nC @ VGS=10V |
| Input Capacitance Ciss | — | 2000 pF @ VDS=12V |
| Power Dissipation (TA) | — | 2.1 W |
| Power Dissipation (TC) | — | 50 W |
| Betriebs-Sperrschichttemperatur | — | -55°C to +150°C |
| Series / Family | — | OptiMOS 5 25V |