BSC014N04LSATMA1 vs BSZ017NE2LS5IATMA1 Comparison
Detailed side-by-side comparison of BSC014N04LSATMA1 by Infineon and BSZ017NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC014N04LSATMA1 | BSZ017NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 25 V |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 96 W | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Operating Temperature Range | -55C to +175C | — |
| Package | SuperSO8 (TDSON-8 FL) 5x6 mm | PG-TSDSON-8-FL (8-PowerTDFN) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) | — |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (TA) | — | 27 A |
| Continuous Drain Current (TC) | — | 40 A |
| On-Resistance RDS(on) @ VGS=10V | — | 1.7 mΩ |
| On-Resistance Test Current | — | 20 A |
| Gate-Source Voltage (VGS) Rating | — | ±16 V |
| Gate Threshold Voltage VGS(th) | — | 2 V @ 250 µA |
| Total Gate Charge Qg | — | 30 nC @ VGS=10V |
| Input Capacitance Ciss | — | 2000 pF @ VDS=12V |
| Power Dissipation (TA) | — | 2.1 W |
| Power Dissipation (TC) | — | 50 W |
| Operating Junction Temperature | — | -55°C to +150°C |
| Series / Family | — | OptiMOS 5 25V |