BSC014N04LSATMA1 vs BSZ017NE2LS5IATMA1 Comparison

Detailed side-by-side comparison of BSC014N04LSATMA1 by Infineon and BSZ017NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014N04LSATMA1

BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 βœ“ Active
Infineon
BSZ017NE2LS5IATMA1

BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΞ© TSDSON-8

BSZ017NE2LS5IATMA1 βœ“ Active

Specification Comparison

Parameter BSC014N04LSATMA1 BSZ017NE2LS5IATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.74 $0.64
Manufacturer Infineon Technologies β€”
Series OptiMOS 5 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 40 V 25 V
Continuous Drain Current (ID) at Ta 32 A β€”
Continuous Drain Current (ID) at Tc 100 A β€”
RDS(on) max at VGS=10 V 1.4 mOhm β€”
Power Dissipation at Ta 2.5 W β€”
Power Dissipation at Tc 96 W β€”
Gate-Source Voltage (VGS) max 20 V β€”
Operating Temperature Range -55C to +175C β€”
Package SuperSO8 (TDSON-8 FL) 5x6 mm PG-TSDSON-8-FL (8-PowerTDFN)
Mounting Type Surface Mount Surface Mount
Technology Trench (OptiMOS 5, thin-wafer) β€”
RoHS Status Compliant Compliant
MSL Level 1 (unlimited) β€”
Polarity β€” N-Channel
Continuous Drain Current (TA) β€” 27 A
Continuous Drain Current (TC) β€” 40 A
On-Resistance RDS(on) @ VGS=10V β€” 1.7 mΞ©
On-Resistance Test Current β€” 20 A
Gate-Source Voltage (VGS) Rating β€” Β±16 V
Gate Threshold Voltage VGS(th) β€” 2 V @ 250 Β΅A
Total Gate Charge Qg β€” 30 nC @ VGS=10V
Input Capacitance Ciss β€” 2000 pF @ VDS=12V
Power Dissipation (TA) β€” 2.1 W
Power Dissipation (TC) β€” 50 W
Operating Junction Temperature β€” -55Β°C to +150Β°C
Series / Family β€” OptiMOS 5 25V

Datasheets & Resources

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