BSC014N04LSIATMA1 vs IPB020N10N5ATMA1 Vergleich
Detaillierter Direktvergleich von BSC014N04LSIATMA1 von Infineon und IPB020N10N5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC014N04LSIATMA1 | IPB020N10N5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,39 | $3,30 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench, thin-wafer) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 40 V | 100 V |
| Continuous Drain Current (ID, Tc) | 100 A | — |
| Continuous Drain Current (ID, Ta) | 31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (PD, Tc) | 96 W | — |
| Power Dissipation (PD, Ta) | 2.5 W | — |
| Betriebstemperaturbereich | -55 C to +150 C | -55C to +175C |
| Gehäuse | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) | PG-TO263-3 (D2PAK-3) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | Compliant |
| Tradename | OptiMOS | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPB020N10N5ATMA1 |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 120 A |
| Maximum Drain Current (ID max, per Infineon product page) | — | 176 A |
| On-Resistance RDS(on) max | — | 2 mΩ |
| Power Dissipation (PD) at Tc | — | 375 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Channel Type | — | N-Channel |
| Packaging | — | Tape & Reel (ATMA1 suffix) |