BSC015NE2LS5IATMA1 vs ISC015N04NM5ATMA1 Vergleich
Detaillierter Direktvergleich von BSC015NE2LS5IATMA1 von Infineon und ISC015N04NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC015NE2LS5IATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,69 | $0,98 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 25 V | — |
| Continuous Drain Current (ID) at Ta | 33 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 1.5 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 50 W | — |
| Gehäuse | PG-TDSON-8-6 (SuperSO8 5x6) | — |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | 8 |
| Technology | OptiMOS 5 trench | OptiMOS 5 (trench MOSFET) |
| Betriebstemperaturbereich | -55C to +150C (junction) | -55 C to +175 C (junction, per OptiMOS 5) |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: Qg typical value] | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per Infineon SuperSO8 family) |
| Series | — | OptiMOS 5 40V Normal Level |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 3.4 V (typ) |
| R_DS(on) max | — | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Continuous Drain Current (ID) at Ta=25C | — | 33 A |
| Continuous Drain Current (ID) at Tc=25C | — | 206 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 115 W |
| Gehäuse / Bauform | — | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Drive Level | — | Normal Level (VGS(th) ~3.4 V) |