BSC015NE2LS5IATMA1 vs ISC015N04NM5ATMA1 比較
詳細な並列比較: BSC015NE2LS5IATMA1 メーカー: Infineon および ISC015N04NM5ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC015NE2LS5IATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.69 | $0.98 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 25 V | — |
| Continuous Drain Current (ID) at Ta | 33 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 1.5 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 50 W | — |
| パッケージ | PG-TDSON-8-6 (SuperSO8 5x6) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| ピン数 | 8 | 8 |
| Technology | OptiMOS 5 trench | OptiMOS 5 (trench MOSFET) |
| 動作温度範囲 | -55C to +150C (junction) | -55 C to +175 C (junction, per OptiMOS 5) |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: Qg typical value] | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | 1 (per JEDEC J-STD-020) | 1 (per Infineon SuperSO8 family) |
| Series | — | OptiMOS 5 40V Normal Level |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 3.4 V (typ) |
| R_DS(on) max | — | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Continuous Drain Current (ID) at Ta=25C | — | 33 A |
| Continuous Drain Current (ID) at Tc=25C | — | 206 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 115 W |
| パッケージ / ケース | — | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Drive Level | — | Normal Level (VGS(th) ~3.4 V) |