BSC015NE2LS5IATMA1 vs ISC015N04NM5ATMA1 Comparación
Comparación detallada lado a lado de BSC015NE2LS5IATMA1 por Infineon y ISC015N04NM5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC015NE2LS5IATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,69 | $0,98 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 25 V | — |
| Continuous Drain Current (ID) at Ta | 33 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 1.5 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 50 W | — |
| Encapsulado | PG-TDSON-8-6 (SuperSO8 5x6) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | 8 |
| Technology | OptiMOS 5 trench | OptiMOS 5 (trench MOSFET) |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) | -55 C to +175 C (junction, per OptiMOS 5) |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: Qg typical value] | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 (per Infineon SuperSO8 family) |
| Series | — | OptiMOS 5 40V Normal Level |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 3.4 V (typ) |
| R_DS(on) max | — | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Continuous Drain Current (ID) at Ta=25C | — | 33 A |
| Continuous Drain Current (ID) at Tc=25C | — | 206 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 115 W |
| Encapsulado / Carcasa | — | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Drive Level | — | Normal Level (VGS(th) ~3.4 V) |