BSC016N06NSATMA1 vs BSC028N06NSTATMA1 Vergleich

Detaillierter Direktvergleich von BSC016N06NSATMA1 von Infineon und BSC028N06NSTATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSC016N06NSATMA1 BSC028N06NSTATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,65 $0,40
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS™ 5 60V —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, Tc) 100 A —
Continuous Drain Current (ID, TA) 30 A —
On-Resistance RDS(on) max @ VGS=10V 1.6 mΩ —
Total Gate Charge (Qg) 71 nC —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Power Dissipation (TA) 2.5 W 3 W
Power Dissipation (TC) 139 W 100 W
Betriebstemperaturbereich -55 °C to +150 °C —
Gehäuse PG-TDSON-8 FL (SuperSO8 5x6) PG-TDSON-8-7 (SuperSO8, 5x6 mm)
Montageart Surface Mount Surface Mount
MSL-Level 1 (unlimited) 1
RoHS-Status Compliant Compliant
Gate Drive (recommended) 10 V —
Technology OptiMOS™ 5 MOSFET N-Channel (OptiMOS 5)
Series — OptiMOS 5
Part Number Base — BSC028N06NS
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.5 V to 3.5 V
Total Gate Charge Qg — 37 nC @ VGS=10V
Input Capacitance Ciss — 3000 nC [DATA_NEEDED: confirm exact pF from datasheet]
Output Capacitance Coss — 825 pF
Reverse Transfer Capacitance Crss — 56 pF
Betriebs-Sperrschichttemperatur — -55C to +175C
Halogenfrei — Yes
AEC-Q101 Automotive Qualified — [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ]

Datenblätter & Ressourcen

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