BSC016N06NSATMA1 vs BSC028N06NSTATMA1 Comparison

Detailed side-by-side comparison of BSC016N06NSATMA1 by Infineon and BSC028N06NSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC016N06NSATMA1 BSC028N06NSTATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.40
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOSβ„’ 5 60V β€”
Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, Tc) 100 A β€”
Continuous Drain Current (ID, TA) 30 A β€”
On-Resistance RDS(on) max @ VGS=10V 1.6 mΞ© β€”
Total Gate Charge (Qg) 71 nC β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Power Dissipation (TA) 2.5 W 3 W
Power Dissipation (TC) 139 W 100 W
Operating Temperature Range -55 Β°C to +150 Β°C β€”
Package PG-TDSON-8 FL (SuperSO8 5x6) PG-TDSON-8-7 (SuperSO8, 5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) 1
RoHS Status Compliant Compliant
Gate Drive (recommended) 10 V β€”
Technology OptiMOSβ„’ 5 MOSFET N-Channel (OptiMOS 5)
Series β€” OptiMOS 5
Part Number Base β€” BSC028N06NS
Continuous Drain Current (ID) at TA=25C β€” 24 A
Continuous Drain Current (ID) at TC=25C β€” 100 A
On-Resistance RDS(on) max at VGS=10V β€” 2.8 mOhm
Gate Threshold Voltage VGS(th) typ β€” 2.5 V to 3.5 V
Total Gate Charge Qg β€” 37 nC @ VGS=10V
Input Capacitance Ciss β€” 3000 nC [DATA_NEEDED: confirm exact pF from datasheet]
Output Capacitance Coss β€” 825 pF
Reverse Transfer Capacitance Crss β€” 56 pF
Operating Junction Temperature β€” -55C to +175C
Halogen-Free β€” Yes
AEC-Q101 Automotive Qualified β€” [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ]

Datasheets & Resources

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