BSC019N08NS5ATMA1 vs BSF134N10NJ3GXUMA1 Vergleich
Detaillierter Direktvergleich von BSC019N08NS5ATMA1 von Infineon und BSF134N10NJ3GXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSC019N08NS5ATMA1 | BSF134N10NJ3GXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,78 | $0,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 (N-channel trench) | Trench-gate OptiMOS planar |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at TA=25C | 28 A | — |
| Continuous Drain Current (ID) at TC=25C | 237 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max at VGS=10V | 1.9 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.0 V | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation (TA=25C) | 3 W | — |
| Power Dissipation (TC=25C) | 214 W | — |
| Betriebstemperaturbereich | -55 C to +150 C | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] |
| Gehäuse | PG-TSON-8-3 (SuperSO8 5x6 mm) | MG-WDSON-2 (CanPAK M) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Series | — | OptiMOS 100 V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TA=25°C | — | 9 A |
| Continuous Drain Current (ID) at TC=25°C | — | 40 A |
| Power Dissipation (PD) at TA=25°C | — | 2.2 W |
| Power Dissipation (PD) at TC=25°C | — | 43 W |
| Configuration | — | Single with built-in diode |
| Terminal Position | — | Bottom |
| Terminal Finish | — | Silver Nickel |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max value] |
| Body Diode Reverse Recovery | — | [DATA_NEEDED: trr value] |