BSC019N08NS5ATMA1 vs BSF134N10NJ3GXUMA1 Comparação
Comparação detalhada lado a lado de BSC019N08NS5ATMA1 por Infineon e BSF134N10NJ3GXUMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 ✓ AtivoComparação de especificações
| Parâmetro | BSC019N08NS5ATMA1 | BSF134N10NJ3GXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,78 | $0,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 (N-channel trench) | Trench-gate OptiMOS planar |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at TA=25C | 28 A | — |
| Continuous Drain Current (ID) at TC=25C | 237 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max at VGS=10V | 1.9 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.0 V | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation (TA=25C) | 3 W | — |
| Power Dissipation (TC=25C) | 214 W | — |
| Faixa de temperatura de operação | -55 C to +150 C | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] |
| Encapsulamento | PG-TSON-8-3 (SuperSO8 5x6 mm) | MG-WDSON-2 (CanPAK M) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | 1 | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Series | — | OptiMOS 100 V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TA=25°C | — | 9 A |
| Continuous Drain Current (ID) at TC=25°C | — | 40 A |
| Power Dissipation (PD) at TA=25°C | — | 2.2 W |
| Power Dissipation (PD) at TC=25°C | — | 43 W |
| Configuration | — | Single with built-in diode |
| Terminal Position | — | Bottom |
| Terminal Finish | — | Silver Nickel |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max value] |
| Body Diode Reverse Recovery | — | [DATA_NEEDED: trr value] |