BSC019N08NS5ATMA1 vs BSF134N10NJ3GXUMA1 비교

다음의 상세 나란히 비교: BSC019N08NS5ATMA1 제조: Infineon 및 BSF134N10NJ3GXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSC019N08NS5ATMA1 BSF134N10NJ3GXUMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.78 $0.78
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 5 (N-channel trench) Trench-gate OptiMOS planar
Polarity N-Channel —
Drain-Source Voltage (VDS) max 80 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at TA=25C 28 A —
Continuous Drain Current (ID) at TC=25C 237 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) max at VGS=10V 1.9 mOhm —
Gate Threshold Voltage VGS(th) typ 3.0 V —
Total Gate Charge Qg [DATA_NEEDED: total gate charge Qg] —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 214 W —
동작 온도 범위 -55 C to +150 C -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet]
패키지 PG-TSON-8-3 (SuperSO8 5x6 mm) MG-WDSON-2 (CanPAK M)
실장 유형 Surface Mount Surface Mount
MSL 레벨 1 [DATA_NEEDED: MSL rating]
RoHS 상태 Compliant Compliant
Avalanche Rated Yes —
Series — OptiMOS 100 V
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TA=25°C — 9 A
Continuous Drain Current (ID) at TC=25°C — 40 A
Power Dissipation (PD) at TA=25°C — 2.2 W
Power Dissipation (PD) at TC=25°C — 43 W
Configuration — Single with built-in diode
Terminal Position — Bottom
Terminal Finish — Silver Nickel
Gate Charge (Qg) — [DATA_NEEDED: Qg value]
RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max value]
Body Diode Reverse Recovery — [DATA_NEEDED: trr value]

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