BSC022N04LS6ATMA1 vs BSC014N04LSIATMA1 Vergleich
Detaillierter Direktvergleich von BSC022N04LS6ATMA1 von Infineon und BSC014N04LSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC022N04LS6ATMA1 | BSC014N04LSIATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,66 | $0,39 |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS™ 6 (N-channel trench) | OptiMOS 5 (trench, thin-wafer) |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta | 27 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Maximum Pulsed Drain Current (IDM) | 139 A | — |
| On-Resistance RDS(on) max | 2.2 mOhm at VGS=10 V | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 79 W | — |
| Gehäuse | SuperSO8 5x6 (PG-TDSON-8-1) | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Montageart | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Pin-Anzahl | 8 | — |
| Betriebstemperatur | -55 C to +175 C (junction) | — |
| RoHS-Status | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, Ta) | — | 31 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute maximum] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | — | 96 W |
| Power Dissipation (PD, Ta) | — | 2.5 W |
| Betriebstemperaturbereich | — | -55 C to +150 C |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| Tradename | — | OptiMOS |