BSC022N04LS6ATMA1 vs BSC014N04LSIATMA1 对比
详细并排对比 BSC022N04LS6ATMA1 出自 Infineon 和 BSC014N04LSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC022N04LS6ATMA1 | BSC014N04LSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.66 | $0.39 |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS™ 6 (N-channel trench) | OptiMOS 5 (trench, thin-wafer) |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta | 27 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Maximum Pulsed Drain Current (IDM) | 139 A | — |
| On-Resistance RDS(on) max | 2.2 mOhm at VGS=10 V | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 79 W | — |
| 封装 | SuperSO8 5x6 (PG-TDSON-8-1) | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| 安装类型 | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| 引脚数量 | 8 | — |
| 工作温度 | -55 C to +175 C (junction) | — |
| RoHS 状态 | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, Ta) | — | 31 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute maximum] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | — | 96 W |
| Power Dissipation (PD, Ta) | — | 2.5 W |
| 工作温度范围 | — | -55 C to +150 C |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| Tradename | — | OptiMOS |