BSC027N04LSGATMA1 vs IAUC120N06S5L032ATMA1 Vergleich
Detaillierter Direktvergleich von BSC027N04LSGATMA1 von Infineon und IAUC120N06S5L032ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSC027N04LSGATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,54 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | OptiMOS 5 (60 V) |
| Transistortyp | N-Channel MOSFET | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 24 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.7 mΩ | — |
| Power Dissipation (Ta=25°C) | 2.5 W | — |
| Verlustleistung (TC=25°C) | 83 W | — |
| Betriebstemperaturbereich | -55°C to +150°C | -55 C to +175 C (T_j) |
| Gehäuse | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-34 (5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 3 (Trench) | OptiMOS 5 Trench |
| MSL-Level | 1 | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Halogenfrei | Yes | — |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, T_j) | — | 120 A |
| R_DS(on) Max (V_GS = 10 V) | — | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | — | 94 W |
| AEC-Q101 Qualified | — | Yes |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | — | [DATA_NEEDED: Q_G total at V_GS=10V] |