BSC030N03MSGATMA1 vs BSC035N04LSGATMA1 Vergleich
Detaillierter Direktvergleich von BSC030N03MSGATMA1 von Infineon und BSC035N04LSGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC030N03MSGATMA1 | BSC035N04LSGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,43 | $0,48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3M | OptiMOS 3 |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at Ta | 21 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | 100 A |
| Drain-Source On-Resistance (RDS(on)) | 3.0 mΩ (typical at VGS=10V) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 1.7 V (typ) |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc=25°C | 69 W | — |
| Betriebs-Sperrschichttemperatur | -55°C to +150°C | -55°C to +150°C |
| Gehäuse | PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) | PG-TDSON-8-1 (8-pin, exposed drain pad) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Drive Voltage (Min/Max RDS(on)) | 4.5V / 10V | — |
| Status | Active | — |
| Continuous Drain Current (ID) at Ta=25°C | — | 21 A |
| RDS(on) Max at VGS=10V | — | 3.5 mΩ |
| Power Dissipation (Pd) at Ta=25°C | — | 2.5 W |
| Power Dissipation (Pd) at Tc=25°C | — | 69 W |
| Lead-Free | — | Yes |