BSC030N03MSGATMA1 vs BSC035N04LSGATMA1 Comparison

Detailed side-by-side comparison of BSC030N03MSGATMA1 by Infineon and BSC035N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC030N03MSGATMA1 BSC030N03MSGATMA1 - 30V N-Ch MOSFET, 3mΩ OptiMOS | Infineon

BSC030N03MSGATMA1 - 30V N-Ch MOSFET, 3mΩ OptiMOS | Infineon

BSC030N03MSGATMA1 ✓ Active

Specification Comparison

Parameter BSC030N03MSGATMA1 BSC035N04LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.43 $0.48
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3M OptiMOS 3
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at Ta 21 A
Continuous Drain Current (ID) at Tc=25°C 100 A 100 A
Drain-Source On-Resistance (RDS(on)) 3.0 mΩ (typical at VGS=10V)
Gate-Source Voltage (VGS) max ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] 1.7 V (typ)
Power Dissipation at Ta 2.5 W
Power Dissipation at Tc=25°C 69 W
Operating Junction Temperature -55°C to +150°C -55°C to +150°C
Package PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) PG-TDSON-8-1 (8-pin, exposed drain pad)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Drive Voltage (Min/Max RDS(on)) 4.5V / 10V
Status Active
Continuous Drain Current (ID) at Ta=25°C 21 A
RDS(on) Max at VGS=10V 3.5 mΩ
Power Dissipation (Pd) at Ta=25°C 2.5 W
Power Dissipation (Pd) at Tc=25°C 69 W
Lead-Free Yes

Datasheets & Resources

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