BSC050N04LSGATMA1 vs BSZ120P03NS3GATMA1 Vergleich
Detaillierter Direktvergleich von BSC050N04LSGATMA1 von Infineon und BSZ120P03NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSZ120P03NS3GATMA1 - -30V P-Ch 12mOhm OptiMOS P3 MOSFET | Infineon
BSZ120P03NS3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSC050N04LSGATMA1 | BSZ120P03NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,41 | $0,12 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | — |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 57 W | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Technology | OptiMOS 3 (trench MOSFET) | OptiMOS P3 |
| Gehäuse | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C | -55C to +150C |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | 1 |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (TA=25C) | — | -11 A |
| Continuous Drain Current (TC=25C) | — | -40 A |
| Power Dissipation (TA=25C) | — | 2.1 W |
| Power Dissipation (TC=25C) | — | 52 W |
| On-Resistance RDS(on) max @ VGS=-10V | — | 12 mOhm |
| On-Resistance RDS(on) max @ VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage VGS(th) typ | — | -1.7 V |
| Lead-Free | — | Yes |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |