BSC050N04LSGATMA1 vs BSZ120P03NS3GATMA1 비교
다음의 상세 나란히 비교: BSC050N04LSGATMA1 제조: Infineon 및 BSZ120P03NS3GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC050N04LSGATMA1 | BSZ120P03NS3GATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.41 | $0.12 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | — |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 57 W | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Technology | OptiMOS 3 (trench MOSFET) | OptiMOS P3 |
| 패키지 | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55C to +150C | -55C to +150C |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | — |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | 1 | 1 |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (TA=25C) | — | -11 A |
| Continuous Drain Current (TC=25C) | — | -40 A |
| Power Dissipation (TA=25C) | — | 2.1 W |
| Power Dissipation (TC=25C) | — | 52 W |
| On-Resistance RDS(on) max @ VGS=-10V | — | 12 mOhm |
| On-Resistance RDS(on) max @ VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage VGS(th) typ | — | -1.7 V |
| Lead-Free | — | Yes |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |