BSC050N04LSGATMA1 vs BSZ120P03NS3GATMA1 Comparação
Comparação detalhada lado a lado de BSC050N04LSGATMA1 por Infineon e BSZ120P03NS3GATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
BSZ120P03NS3GATMA1 - -30V P-Ch 12mOhm OptiMOS P3 MOSFET | Infineon
BSZ120P03NS3GATMA1 ✓ AtivoComparação de especificações
| Parâmetro | BSC050N04LSGATMA1 | BSZ120P03NS3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,41 | $0,12 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | — |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 57 W | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Technology | OptiMOS 3 (trench MOSFET) | OptiMOS P3 |
| Encapsulamento | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Faixa de temperatura de operação | -55C to +150C | -55C to +150C |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | — |
| Status RoHS | Compliant | Compliant |
| Nível MSL | 1 | 1 |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (TA=25C) | — | -11 A |
| Continuous Drain Current (TC=25C) | — | -40 A |
| Power Dissipation (TA=25C) | — | 2.1 W |
| Power Dissipation (TC=25C) | — | 52 W |
| On-Resistance RDS(on) max @ VGS=-10V | — | 12 mOhm |
| On-Resistance RDS(on) max @ VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage VGS(th) typ | — | -1.7 V |
| Lead-Free | — | Yes |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |