BSC059N04LS6ATMA1 vs BSC014N06NSATMA1 Vergleich
Detaillierter Direktvergleich von BSC059N04LS6ATMA1 von Infineon und BSC014N06NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC059N04LS6ATMA1 | BSC014N06NSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,74 | $0,89 |
| Technology | OptiMOS 6 (N-channel MOSFET) | OptiMOS 5 (shielded-gate trench) |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 17 A | — |
| Continuous Drain Current (ID) at TC=25C | 49 A | — |
| Pulsed Drain Current (ID,pulse) at TC=25C | 59 A | — |
| On-Resistance RDS(on) max | 5.9 mOhm at VGS=10 V | — |
| Total Power Dissipation at TA=25C | 3 W | — |
| Total Power Dissipation at TC=25C | 38 W | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Betriebstemperaturbereich | -55C to +150C | -55C to +150C |
| Gehäuse | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Diode Continuous Forward Current (IS) | 38 A at TC=25C | — |
| Diode Pulse Current (IS,pulse) | 236 A at TC=25C | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Transistortyp | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) Max | — | +/- 20 V |
| Continuous Drain Current (ID) at Ta | — | 30 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Typ @ VGS=10V | — | 1.4 mOhm |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.45 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 156 W |
| MSL-Level | — | 1 |