BSC059N04LS6ATMA1 vs BSC014N06NSATMA1 Сравнение
Подробное сравнение бок о бок BSC059N04LS6ATMA1 от Infineon и BSC014N06NSATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BSC059N04LS6ATMA1 | BSC014N06NSATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,74 | $0,89 |
| Technology | OptiMOS 6 (N-channel MOSFET) | OptiMOS 5 (shielded-gate trench) |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 17 A | — |
| Continuous Drain Current (ID) at TC=25C | 49 A | — |
| Pulsed Drain Current (ID,pulse) at TC=25C | 59 A | — |
| On-Resistance RDS(on) max | 5.9 mOhm at VGS=10 V | — |
| Total Power Dissipation at TA=25C | 3 W | — |
| Total Power Dissipation at TC=25C | 38 W | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Диапазон рабочих температур | -55C to +150C | -55C to +150C |
| Корпус | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Diode Continuous Forward Current (IS) | 38 A at TC=25C | — |
| Diode Pulse Current (IS,pulse) | 236 A at TC=25C | — |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Тип транзистора | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) Max | — | +/- 20 V |
| Continuous Drain Current (ID) at Ta | — | 30 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Typ @ VGS=10V | — | 1.4 mOhm |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.45 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 156 W |
| Уровень MSL | — | 1 |